Epitaxial Growth of Si-Based Ternary Alloy Semiconductor Ba_(1-x)Sr_xSi_2 Films on Si(111) Substrates by Molecular Beam Epitaxy

摘要

We have grown [100]-oriented Ba_(1-x)Sr_xSi_2 epitaxial films with different Sr molar fractions x on Si(111) substrates by molecular beam epitaxy (MBE) at 600℃ using a [100]-oriented BaSi_2 epitaxial template formed by reactive deposition epitaxy (RDE). It was found from Rutherford backscattering spectroscopy (RBS) measurements that the Sr molar fraction of the grown Ba_(1-x)Sr_xSi_2 layers increased from 0 to 0.49 with increasing deposited Sr-to-Ba ratio from 0 to 2.5. θ-2θ X-ray diffraction measurements revealed that the a-axis lattice constant of Ba_(1-x)Sr_xSi_2 decreased linearly with the Sr molar fraction.