Novel Silicon On Insulator Metal Oxide Semiconductor Field Effect Transistors with Buried Back Gate

摘要

One of the most promising ways of realizing metal oxide semiconductor field effect transistors (MOSFETs) with high speed and ultralow power consumption is by varying the threshold voltage of fully depleted silicon on insulator (FD-SOI) MOSFETs by changing back gate bias. We have studied FD-SOI MOSFETs with buried back gate by experiment and simulation in order to realize both high-performance and low-voltage ULSIs. It was confirmed that the back gate is very effective not only for increasing the ON current in the active mode but also for decreasing the cut-off current in the standby mode by controlling the threshold voltage.