InGaN/GaN Multiple Quantum Disk Nanocolumn Light-Emitting Diodes Grown on (111) Si Substrate

摘要

GaN-nanocolumn-based InGaN/GaN multiple quantum disk (MQD) light-emitting diodes (LEDs) with a novel columnar structure were fabricated on n-type (111) Si substrates. The n-GaN and InGaN/GaN MQD active region had isolated columnar structures, while the diameters were gradually increased in the p-GaN region by controlling the growth conditions. Consequently, the nanocolumn LED had a continuous surface without chasms. This novel structure enables p-type electrodes to be fabricated by the conventional method on top of nanocolumn devices while keeping the superior optical properties of the isolated nanocolumn active region. The nanocolumn LED showed clear rectifying behavior with a typical turn-on voltage of 2.5-3.0 V at room temperature. Electroluminescence was observed through semitransparent electrodes with various emission colors from green (530nm) to red (645nm).