Analysis of forward tunneling current in InGaN/GaN multiple quantum well light-emitting diodes grown on Si (111) substrate

摘要

We report the characteristics of forward tunneling current in InGaN/GaN multiple quantum well light-emitting diodes (LEDs) grown on Si (111) substrate. Temperature-variable current-voltage (I-V) measurement from 80 K to 400 K reveals that forward current regimes can be distinguished by corresponding slopes in semi-logarithmic plot, which are associated with different forward conduction mechanisms of InGaN LED. Temperature-insensitive tunneling behavior appears to be dominant at low current injection regime for InGaN LEDs on Si. Conductive atomic force microscopy analysis indicates that V-pits associated with threading dislocations could be main leakage path of forward tunneling current of InGaN LED on Si.