Strained Thick p-InGaN Layers for GaN/InGaN Heterojunction Bipolar Transistors on Sapphire Substrates

摘要

Thick p-InGaN layers were grown on GaN by metalorganic vapor phase epitaxy to investigate the strain inside p-InGaN using a reciprocal space map of X-ray diffraction intensity. It was found that a large part of p-InGaN grows coherently on the GaN buffer layer, even though it is much thicker than the calculated critical thickness. This result means that few dislocations are generated at the InGaN/GaN interface. Using this strained thick p-InGaN as a base, a GaN/InGaN heterojunction bipolar transistor was fabricated on a sapphire substrate. Its maximum current gain was as high as 1000 and its offset voltage as low as 0.2V, which matches that calculated from the conduction-band discontinuity between the n-GaN emitter and the p-InGaN base.