Time-Resolved Measurement of Charging on Hole Bottoms of SiO_2 Wafer Exposed to Plasma Etching in a Pulsed Two-Frequency Capacitively Coupled Plasma

摘要

We experimentally demonstrate a time chart of the shading either of electrons or positive ions on a topologically patterned wafer exposed to plasma etching by synchronized measurements of bottom-charging potential in a SiO_2 hole, current components incident on the wafer, and optical emission CT in the interface in a pulsed two frequency capacitively coupled plasma. The present paper gives a history of charging affected dynamically by an instantaneous electrical response on the bottom.