Room-Temperature Single-Hole Transistors Made Using Semiconductor Carbon Nanotube with Artificial Defects near Carrier Depletion Region

摘要

We have succeeded in observing the single hole transistor characteristics in position-controlled grown carbon nanotubes (CNTs) with artificial defects formed by a chemical process. Coulomb blockade characteristics were observed around the hole depletion region even at room temperature. At a low temperature, however, the Coulomb blockade characteristics were observed both in hole and electron transport regions.