Room-Temperature Carbon Nanotube Single-Electron Transistor with Defects Introduced by La(NO_3)_3 Process

摘要

The new fabrication process for a carbon nanotube (CNT) single-electron transistor (SET) operated at room temperature was proposed using La(NO_3)_3. The carbon nanotube reacts with oxygen included in La(NO_3)_3 at high temperature and the defects that worked as tunnel junctions were introduced. For consistency CNT-SET shows Coulomb oscillation and Coulomb diamond characteristics at 300 K. From the simulation, it was found that the newly proposed process introduced three effective defects into CNT, and CNT-SET worked as two islands SET.