Coulomb Oscillations at Room-Temperature of Single-Walled Carbon Nanotube Field-Effect Transistors

摘要

Single-walled carbon nanotube field-effect transistors with thin tunnel barriers were fabricated, and room-temperature single-electron transistor operation was realized. Thin tunnel barrier layer, which was oxidized 1-nm-thick aluminum layer, was inserted between nanotube channel and electrodes in order to enhance carrier confinement. Gate voltage dependences of the drain current were measured at 290 K. Clear Coulomb oscillations could be observed for the sample with tunnel barrier layer while only conventional ambipolar characteristics of conventional carbon nanotube field-effect transistors could be observed for the sample without tunnel barrier layer. These results indicate that formation of thin tunnel barrier layer is very effective for realization of single-electron transistor operations at room temperature.