Nonlinear Optical Properties of Hydrogenated Amorphous Si Films Probed by a Novel Z-Scan Technique

摘要

Two-photon absorption coefficient β and intensity-dependent refractive-index n_2 at a wavelength of 1.06 μm in hydrogenated amorphous Si films have been evaluated using an imaging-type Z-scan technique. Obtained β and n_2 are 3000 cm/GW and 0.006 cm~2/GW, which are compared with others and discussed in light of a relation proposed by Sheik-Bahae et al. for crystalline semiconductors. Potential of the film to optical communication devices is pointed out.