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机译:伪晶型In_(0.52)Al_(0.48)As / In_(0.7)Ga_(0.3)As高电子迁移率晶体管的栅极长度减小技术
School of Electrical Engineering, Seoul National University, Shillim-dong, Kwanak-gu, Seoul 151-742, Korea;
pseudomorphic high-electron-mobility transistor; nano-HEMT; plasmas; dielectrics; e-beam lithography system; metal filling problem; transconductance; maximum saturated current; cutoff frequency;
机译:埋入式Pt门InP / In_(0.52)Al_(0.48)As / In_(0.7)Ga_(0.3)As拟态HEMT
机译:120nm栅长的In_(0.7)Ga_(0.3)As / In_(0.52)Al_(0.48)As InP基HEMT
机译:InP衬底上量子阱In_(0.52)Al_(0.48)As / In_(0.53)Ga_(0.47)As / In_(0.52)Al_(0.48)As的电子迁移率和光电导性的增强
机译:MBE在(411)A InP衬底上生长的假晶In_(0.7)Ga_(0.3)As / In_(0.52)Al_(0.48)As HEMT结构中的较高电子迁移率
机译:应变的铟(0.52)铝(0.48)砷化物/铟(x)镓(1-x)砷化物(x大于0.53)高电子迁移率晶体管(HEMT),用于微波/毫米波应用。
机译:栅极长度与漏极-源极距离之比对AlGaN / AlN / GaN异质结构场效应晶体管中电子迁移率的影响
机译:InP / In_ {0.53} Ga_ {0.47} As界面对In_ {0.52} Al_ {0.48} As / In_ {0.53} Ga_ {0.47} As异质结构中自旋轨道相互作用的影响
机译:具有0.25微米栅极假晶入(0.60)Ga(0.40)as / In(0.52)al(0.48)as / Inp调制掺杂场效应晶体管的单片集成平面前端光接收器