机译:埋入式Pt门InP / In_(0.52)Al_(0.48)As / In_(0.7)Ga_(0.3)As拟态HEMT
School of Information and Communications and The WCU Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology (CIST);
Oryong-dong Buk-gu, Gwangju 500-712, South Korea;
School of Information and Communications and The WCU Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology (CIST);
School of Information and Communications and The WCU Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology (CIST);
inp; ingaas; pseudomorphic high electron mobility; transistor (p-hemt); buried-pt gate; inp etch stop layer; schottky contact;
机译:120nm栅长的In_(0.7)Ga_(0.3)As / In_(0.52)Al_(0.48)As InP基HEMT
机译:伪晶型In_(0.52)Al_(0.48)As / In_(0.7)Ga_(0.3)As高电子迁移率晶体管的栅极长度减小技术
机译:100 nm栅极In_(0.52)Al_(0.48)As / In_(0.7)Ga_(0.3)As HEMT的f_T = 260 GHz和f_(max)= 607 GHz,G_(m.max)= 1441 mS / mm
机译:MBE在(411)A InP衬底上生长的假晶In_(0.7)Ga_(0.3)As / In_(0.52)Al_(0.48)As HEMT结构中的较高电子迁移率
机译:应变的铟(0.52)铝(0.48)砷化物/铟(x)镓(1-x)砷化物(x大于0.53)高电子迁移率晶体管(HEMT),用于微波/毫米波应用。
机译:InGaAs / InAlAs / InP量子级联激光器的In0.52Al0.48As波导层MBE生长条件的优化
机译:InP / In_ {0.53} Ga_ {0.47} As界面对In_ {0.52} Al_ {0.48} As / In_ {0.53} Ga_ {0.47} As异质结构中自旋轨道相互作用的影响
机译:具有Er掺杂In(0.52)al(0.48)作为缓冲层的0.1微米栅极In(0.3)Ga(0.47)as / In(0.52)al(0.48)as / Inp mODFET的背栅特性