1.1-μm-Range Low-Resistance InGaAs Quantum-Well Vertical-Cavity Surface-Emitting Lasers with a Buried Type-Ⅱ Tunnel Junction

摘要

We propose 1.1-μm-range InGaAs quantum-well (QW) vertical-cavity surface-emitting lasers (VCSELs) with a buried type-Ⅱ tunnel junction (BTJ). Because of the low electrical resistance of the type-Ⅱ tunnel junction, the chip resistance was reduced by over 40% compared with conventional oxide-confined VCSELs with the same-size aperture. In an aging test, stable operation at 85℃ was maintained in terms of optical and electrical characteristics for over 1000 h without early failure. The introduction of the type-Ⅱ TJ structure can suppress self-heating caused by the chip resistance and may be a practical approach to achieving high-speed VCSELs for advanced optical interconnection.