Room-temperature continuous-wave operations of GaN-based vertical-cavity surface-emitting lasers with buried GaInN tunnel junctions

摘要

We report GaN-based vertical-cavity surface-emitting lasers (VCSELs) with buried GaInN tunnel junctions (TJs). Under room-temperature continuous-wave operation, the VCSEL with an 8 mu m aperture exhibited a low operating voltage of 5.3 V at 10 kA cm(-2)and a differential resistance of 110 omega. In addition, the VCSEL with a 10 mu m aperture showed a threshold current of 14.4 mA and a peak output power of 2.0 mW. An influence of an absorption loss at the GaInN TJ on laser performance was estimated using an analysis of a one-dimensional optical intensity profile based on a cross-sectional STEM image.