Room-temperature continuous-wave operation of GaN-based vertical-cavity surface-emitting lasers with n-type conducting AllnN/GaN distributed Bragg reflectors

摘要

The room-temperature continuous-wave operation of a 1.5 lambda-cavity GaN-based vertical-cavity surface-emitting laser with an n-type conducting AllnN/GaN distributed Bragg reflector (DBR) was achieved. A peak reflectivity of over 99.9% was obtained in the n-type conducting AllnN/GaN DBR so that the current was injected through the DBR for the operation. The threshold current was 2.6 mA, corresponding to the threshold current density of 5.2 kA/cm(2), and the operating voltage was 4.7 V. A lasing spectrum with a peak wavelength of 405.1 nm and a full-width at half maximum of 0.08 nm was also observed. (C) 2016 The Japan Society of Applied Physics.