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首页> 外文期刊>Japanese journal of applied physics >Sensing Property of Self-Sensitive Piezoelectric Microcantilever Utilizing Pb(Zr_(0.52)/Ti_(0.48))O_3 Thin Film and LaNiO_3 Oxide Electrode
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Sensing Property of Self-Sensitive Piezoelectric Microcantilever Utilizing Pb(Zr_(0.52)/Ti_(0.48))O_3 Thin Film and LaNiO_3 Oxide Electrode

机译:利用Pb(Zr_(0.52)/ Ti_(0.48))O_3薄膜和LaNiO_3氧化物电极的自感应压电微悬臂梁的传感特性

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摘要

In the present study, we describe the influence of LaNiO_3 (LNO) oxide electrodes on the sensing property of self-sensitive piezoelectric microcantilevers using Pb(Zr_(0.52)/Ti_(0.48))O_3 (PZT) thin films as a sensor and an actuator. Microcantilevers with and without LNO thin films were fabricated through microelectromchanical systems (MEMS) microfabrication process. The transverse piezoelectric constant d_(31) of the PZT thin films with LNO thin films was determined to be -120 pm/V, while those without LNO thin films was determined to be -80 pm/V. In spite of the higher piezoelectric constant, the sensor output of the self-sensitive cantilevers with LNO thin films is only about 1 /5 of those without LNO thin films. The result will be discussed in relation to the dielectric loss of the PZT thin films.
机译:在本研究中,我们使用Pb(Zr_(0.52)/ Ti_(0.48))O_3(PZT)薄膜作为传感器,并利用LaNiO_3(LNO)氧化物电极对自感压电微悬臂梁的传感特性的影响进行了描述。执行器。通过微机电系统(MEMS)的微细加工工艺来制造具有和不具有LNO薄膜的微悬臂梁。具有LNO薄膜的PZT薄膜的横向压电常数d_(31)被确定为-120pm / V,而没有LNO薄膜的PZT薄膜的横向压电常数被确定为-80pm / V。尽管压电常数较高,但带有LNO薄膜的自感应悬臂的传感器输出仅为不带有LNO薄膜的传感器的约1/5。将关于PZT薄膜的介电损耗讨论结果。

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