Influence of different bottom electrodes to microstructure and electrical properties of Pb(Zr_(0.52)Ti_(0.48) )O_3 ferroelectric films

摘要

LaNiO_3 (LNO) thin films were successfully prepared on Si (100) and Pt/Ti/SiO_2/Si substrates by metalorganic decomposition (MOD). The PZT thin films were spin-coated onto the LNO, LNO/Pt and Pt bottom electrodes by a modified sol-gel method. The crystallographic orientation and the microstructure of the resulting LNO films and PZT thin films on the different bottom electrodes were characterized by X-ray diffraction analysis. The dielectric, ferroelectric and leakage current properties of PZT films on the different bottom electrodes are discussed. The PZT films deposited on LNO/Pt/Ti/SiO_2/Si and LNO/Si (100) substrates show strong (100) preferred orientation, while the films deposited on Pt/Ti/SiO_2/Si substrates show (110) orientations. PZT films on LNO and LNO/Pt bottom electrodes have larger dielectric constant and remnant polarizations compared to those grown on the Pt electrode, but the leakage current of the films on Pt electrode are lower than that on LNO bottom electrode.