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首页> 外文期刊>Materials Letters >Microstructure and electrical properties of Pb(Zr_(0.52)Ti_(0.48))O_3 ferroelectric films on different bottom electrodes
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Microstructure and electrical properties of Pb(Zr_(0.52)Ti_(0.48))O_3 ferroelectric films on different bottom electrodes

机译:不同底部电极上Pb(Zr_(0.52)Ti_(0.48))O_3铁电薄膜的微观结构和电性能

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摘要

The crystalline quality, dielectric and ferroelectricity of the Pb(Zr_(0.52)Ti_(0.48))O_3 (PZT) films deposited on the LaNiO_3 (LNO), LNO/Pt and Pt bottom electrodes were comparatively analyzed to investigate the possibility for their application. LNO thin firms were successfully prepared on Si (100) and Pt(111)/Ti/SiO_2/Si substrates by modified metallorganic decomposition (MOD). The PZT thin firms were spin-coated onto the LNO, LNO/Pt and Pt bottom electrodes by sol-gel method. The crystallographic orientation and the micro structure of the resulting LNO films and PZT thin films on the different bottom electrodes were characterized by X-ray diffraction analysis. The dielectric and ferroelectric properties of PZT films on the different bottom electrodes are discussed. The PZT firms deposited onto Pt/Ti/SiO_2/Si and LNO/Si substrates show strong (110) and (100) preferred orientation, respectively, while the films deposited onto LNO/Pt/Ti/SiO_2/Si substrates show the peaks of mixed orientations. PZT films on LNO and LNO/Pt bottom electrodes have larger dielectric constant and remnant polarizations compared with those grown on the Pt electrode.
机译:比较分析了沉积在LaNiO_3(LNO),LNO / Pt和Pt底部电极上的Pb(Zr_(0.52)Ti_(0.48))O_3(PZT)膜的晶体质量,介电和铁电性,以研究其应用的可能性。通过改性金属有机分解(MOD)成功地在Si(100)和Pt(111)/ Ti / SiO_2 / Si衬底上制备了LNO薄膜。通过溶胶-凝胶法将PZT薄公司旋涂到LNO,LNO / Pt和Pt底部电极上。通过X射线衍射分析表征了在不同底部电极上所得的LNO膜和PZT薄膜的晶体学取向和微观结构。讨论了不同底部电极上PZT膜的介电和铁电性能。沉积在Pt / Ti / SiO_2 / Si和LNO / Si衬底上的PZT厂商分别显示出较强的(110)和(100)优先取向,而沉积在LNO / Pt / Ti / SiO_2 / Si衬底上的膜则显示出峰值。混合方向。与在Pt电极上生长的薄膜相比,LNO和LNO / Pt底部电极上的PZT膜具有更大的介电常数和残余极化。

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