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首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers >Effect in Changes of Conduction and Valence Band Offsets on Exciton Binding Energy in Cd_xZn_(1-x)Se/ZnS_ySe_(1-y) Single Quantum Wells
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Effect in Changes of Conduction and Valence Band Offsets on Exciton Binding Energy in Cd_xZn_(1-x)Se/ZnS_ySe_(1-y) Single Quantum Wells

机译:Cd_xZn_(1-x)Se / ZnS_ySe_(1-y)单量子阱中电导和价带偏移的变化对激子结合能的影响

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摘要

We calculate the induced-strain effects in Cd_xZn_(1-x)Se/ZnS_ySe_(1-y) single quantum wells (SQWs). The conduction (V_c) and valence (V_h) band offsets in this system depend greatly on the alloy contents x and y. The variation in exciton binding energy due to the variations in V_c and V_h with varying y is very small.
机译:我们计算Cd_xZn_(1-x)Se / ZnS_ySe_(1-y)单量子阱(SQWs)中的诱导应变效应。该系统中的导带(V_c)和价带(V_h)的偏移很大程度上取决于合金含量x和y。由于V_c和V_h随y的变化而引起的激子结合能的变化非常小。

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