首页> 外文期刊>Japanese journal of applied physics >Crystallization and Melting Kinetics of Se-Doped Fast-Growth Sb_(70)Te_(30) Phase-Change Recording Films
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Crystallization and Melting Kinetics of Se-Doped Fast-Growth Sb_(70)Te_(30) Phase-Change Recording Films

机译:掺硒快速生长Sb_(70)Te_(30)相变记录膜的结晶和熔融动力学

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摘要

Doping Se into the fast-growth eutectic Sb_(70)Te_(30) recording film can improve the archival stability and the recording sensitivity, but the initialization process will become more difficult. When the concentration of Se was increased, the nucleation rate of the Se-doped Sb_(70)Te_(30) recording films will increase. To achieve smooth switch between the amorphous and crystalline states and simultaneously obtain the maximum optical contrast, the optimum doping concentration of Se into Sb_(70)Te_(30) recording film should be slightly less than 2.1 at.%.
机译:将Se掺入快速生长的Sb_(70)Te_(30)共晶记录膜中可以改善存档稳定性和记录灵敏度,但是初始化过程将变得更加困难。当Se的浓度增加时,掺杂Se的Sb_(70)Te_(30)记录膜的成核速率将增加。为了实现非晶态和结晶态之间的平滑切换并同时获得最大的光学对比度,Se注入Sb_(70)Te_(30)记录膜中的最佳掺杂浓度应略小于2.1 at。%。

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