Crystallization and Melting Kinetics of Zn-Doped Fast-Growth Sb_(70)Te_(30) Phase-Change Recording Films

摘要

Doping Zn into the fast-growth Sb_(70)Te_(30) recording film can improve the archival stability and recording sensitivity, but the initialization and erasing processes will become more difficult. In order to obtain sufficiently high recording sensitivity and archival stability, while maintain adequate initialization and erasing abilities for the rewritable optical memories, the optimal doping concentration of Zn in the Sb_(70)Te_(30) recording film should locate between 5.3 and 17.9 at. %.