Investigation of In-situ Boron-Doped Si Selective Epitaxial Growth by Comparison with Arsenic Doping

摘要

In-situ boron-doped silicon selective epitaxial growth (SEG) was investigated by comparison with in-situ As-doped SEG. The dopant concentration and growth rate of the film grown under low pressure are high for B-doped SEG, while they are high under atmosp