Relationship Between Gallium Concentration And Resistivity Of Gallium-doped Czochralski Silicon Crystals: Investigation Of A Conversion Curve

摘要

The relationship between gallium (Ga) concentration and resistivity was studied in Ga-doped Czochralski (CZ) silicon (Si) single crystals in the dopant concentration range from 1 × 10~(14) to 2 × 10~(18) atoms/cm~3 by the four-point probe method, inductively coupled plasma (ICP) analysis, and Hall-effect measurement. The resistivity of Ga-doped Si was found to be larger than that of B-doped Si, because Ga is not fully ionized at Ga concentrations higher than 10~(16) atoms/cm~3 at 300 K. A conversion curve from resistivity to Ga concentration in the range from 1 × 10~(14) to 1 × 10~(17) atoms/cm~3 is proposed.