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Gallium-doped monocrystalline silicon solar cell and manufacture method for the same

机译:掺镓单晶硅太阳能电池及其制造方法

摘要

A manufacture method for a gallium-doped monocrystalline silicon solar cell is provided. The method includes classifying the sheets of gallium-doped monocrystalline silicon according to resistivity; texturing and washing the sheets of gallium-doped monocrystalline silicon; diffusing the classified, textured and washed sheets of gallium-doped monocrystalline silicon; etching and depositing the sheets of gallium-doped monocrystalline silicon; and metalizing the sheets of gallium-doped monocrystalline silicon. Advantageously, Light Induced Degradation (LID) is efficiently, economically and conveniently suppressed, the light induced efficiency degradation of monocrystalline silicon solar cell can be controlled within 1%, and meanwhile, the effect of the uneven resistivity distribution of gallium-doped monocrystalline on the cell process is reduced.
机译:提供了一种掺杂镓的单晶硅太阳能电池的制造方法。该方法包括根据电阻率将掺杂镓的单晶硅片分类。对掺杂镓的单晶硅片进行纹理化和清洗;扩散经过分类,织构化和水洗的掺杂镓的单晶硅片;蚀刻和沉积掺杂镓的单晶硅片;并金属化掺杂镓的单晶硅片。有利地,有效地,经济地和方便地抑制了光致降解(LID),可以将单晶硅太阳能电池的光致效率降低控制在1%以内,同时,掺杂镓的单晶的电阻率分布不均匀对硅的影响。细胞过程减少。

著录项

  • 公开/公告号US8173528B2

    专利类型

  • 公开/公告日2012-05-08

    原文格式PDF

  • 申请/专利权人 JIAN LI;

    申请/专利号US20090605449

  • 发明设计人 JIAN LI;

    申请日2009-10-26

  • 分类号H01L21/22;

  • 国家 US

  • 入库时间 2022-08-21 17:26:32

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