Investigation of Hot-Carrier-Induced Degradation Mechanisms in p-Type High-Voltage Drain Extended Metal-Oxide-Semiconductor Transistors

摘要

Hot-carrier-induced degradation in p-type drain extended metal-oxide-semiconductor (DEMOS) devices is investigated. The gate voltage biased at the second substrate current peak produces the most device degradation. The generation of interface state (△N_(it)) in the channel region, △N_(it) in the drift region under poly-gate, and negative oxide-trapped charge (△N_(ot)) in the drift region outside poly-gate are responsible for device parameter degradation. △N_(it) in the channel region causes threshold voltage and maximum transconductance degradation. △N_(ot) in the drift region outside poly-gate leads to the increase of linear drain current (I_(dilin)) at the beginning of stress. △N_(it) in the drift region under poly-gate results in the turnaround behavior of |I_(dlin)| shift as the stress time is longer.