Modeling of Subthreshold Swing and Analysis of Short-Channel Effects in Double-Gate Metal Oxide Semiconductor Field-Effect Transistors

摘要

We developed a compact model of the short-channel effect in double-gate metal oxide semiconductor field-effect transistors (DG-MOSFETs). The model is implemented in Hiroshima University STARC IGFET Model (HiSIM)-DG, solving the Poisson equation explicitly for considering the potential distribution within the silicon layer. It is proved that calculation results for HiSIM-DG reproduce the subthreshold as well as the saturation characteristics of two-dimensional (2D) device simulation results. It is found from our investigation that the advantage of DG-MOSFETs, that is, suppressing the short-channel effect in the subthreshold region markedly, is diminished under the saturation condition.