Resistive Switching Ion-Plug Memory for 32-nm Technology Node and Beyond

摘要

We report a novel resistive switching ion-plug memory (IPM) with a dual-layered structure containing a solid electrolyte layer (supply layer) that has Cu ions and a resistive switching layer (memory layer). By adopting this structure, IPM achieved higher endurance and longer retention time compared to previously reported solid electrolyte memory because excess Cu deposition was prevented. The conductive path of Cu with a 20nmφ was observed by a cross sectional transmission electron microscope analysis. Generation/rupture of the path enables local resistance switching at diameters smaller than 32 nmφ. A set/reset operation that takes 30 ns and an endurance of 10~9 cycles were presented. IPM is a promising candidate for high-density memory for 32-nm technology node and beyond.