Resistive Switching Memory towards Embedded Application in 28 nm Node and Beyond

摘要

This work addresses the development of 1Mb embedded RRAM macro on 28 nm standard logic platform. Careful evaluation on thermal stability and reading disturbance of resistance in various resistance ranges were performed in Macro.Compared with conventional eFLASH, this BEOL based RRAM technology provides a competitive solution for low power, low cost embedded application in 28 nm node and beyond.