Nonvolatile Static Random Access Memory Using Magnetic Tunnel Junctions with Current-Induced Magnetization Switching Architecture

摘要

We propose and computationally analyze a nonvolatile static random access memory (NV-SRAM) cell using magnetic tunnel junctions (MTJs) with magnetic-field-free current-induced magnetization switching (CIMS) architecture. A pair of MTJs connected to the storage nodes of a standard SRAM cell with CIMS architecture enables fully electrical store and restore operations for nonvolatile logic information. A wide range of tunneling magnetoresistance (TMR) ratios and V_(half) (the bias voltage when the TMR ratio is reduced to half its original value) values are acceptable for the operation of the proposed NV-SRAM cell. Successful operation can be easily achieved when moderate TMR and V_(half) values such as 100% and 100mV, respectively, are used. The proposed NV-SRAM is expected to be a key component of next-generation power-gating logic systems with extremely low static-power dissipation.