Growth and Characterization of Nanocolumnar-Structure Boron Indium Nitride Alloys Deposited on Sapphire Substrates by Solution Chemical Vapor Deposition

摘要

The growth and characteristics of boron indium nitride (BlnN) alloys deposited on sapphire substrates by solution chemical vapor deposition were studied. These BlnN alloys exhibit a mirror like surface morphology and a flat interface without inclusions. An X-ray diffraction peak observed at a 2θ angle of 38.71° is associated with the (111) orientation of B_(0.5)In_(0.5)N. An emission peak appears in the photoluminescence (PL) spectrum of BlnN alloy at temperatures between 20 and 120 K. This peak is at 323 nm (3.839eV) jn the 20 K PL spectrum and shifts to 325 nm (3.82 eV) as temperature approaches 120 K.