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首页> 外文期刊>Japanese journal of applied physics >Nanoscale Observation of Poling Behaviors in Nd-Substituted Bi_4Ti_3O_(12) Ferroelectric Thin Films
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Nanoscale Observation of Poling Behaviors in Nd-Substituted Bi_4Ti_3O_(12) Ferroelectric Thin Films

机译:Nd替代Bi_4Ti_3O_(12)铁电薄膜中极化行为的纳米尺度观察

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摘要

In this study, the effects of oxygen vacancies on the local poling properties of Bi-layered ferroelectric thin films were examined. Bi_(3.15)Nd_(0.85)Ti_3O_(12) (BNT) thin films were coated on Pt(111 )/Ti/SiO_2/Si substrates using a sol-gel method. An oxygen vacancy of 2.4 ± 0.5% was observed mainly at the Bi_2O_2~(2+) layers in the film that annealed in an oxygen-deficient atmosphere. The film containing oxygen vacancies showed a shift in the polarization-electric field hysteresis loop. Contact-mode electrostatic force microscopy revealed a domain pinning behavior in the BNT film with oxygen vacancies. The unpolarized domains were explained by the built-in field formed by the oxygen vacancies in the Bi_2O_2~(2+) layers.
机译:在这项研究中,研究了氧空位对双层铁电薄膜局部极化性质的影响。使用溶胶-凝胶法将Bi_(3.15)Nd_(0.85)Ti_3O_(12)(BNT)薄膜涂覆在Pt(111)/ Ti / SiO_2 / Si衬底上。主要在缺氧气氛中退火的薄膜中的Bi_2O_2〜(2+)层上观察到2.4±0.5%的氧空位。包含氧空位的膜在极化电场磁滞回线中显示出偏移。接触模式静电力显微镜显示具有氧空位的BNT膜中的畴钉扎行为。通过Bi_2O_2〜(2+)层中的氧空位形成的内建磁场解释了非极化区域。

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  • 来源
    《Japanese journal of applied physics 》 |2010年第9issue1期| p.091501.1-091501.5| 共5页
  • 作者单位

    Department of Physics, Ewha Womans University, Seoul 120-750, Korea;

    rnDepartment of Physics, Ewha Womans University, Seoul 120-750, Korea;

    rnDepartment of Physics, Ewha Womans University, Seoul 120-750, Korea;

    rnDepartment of Physics, Ewha Womans University, Seoul 120-750, Korea;

    rnDepartment of Physics, The Catholic University of Korea (CUK), Bucheon 420-743, Korea;

    rnDepartment of Physics, The Catholic University of Korea (CUK), Bucheon 420-743, Korea;

    rnDepartment of Physics, The Catholic University of Korea (CUK), Bucheon 420-743, Korea;

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