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机译:Nd替代Bi_4Ti_3O_(12)铁电薄膜中极化行为的纳米尺度观察
Department of Physics, Ewha Womans University, Seoul 120-750, Korea;
rnDepartment of Physics, Ewha Womans University, Seoul 120-750, Korea;
rnDepartment of Physics, Ewha Womans University, Seoul 120-750, Korea;
rnDepartment of Physics, Ewha Womans University, Seoul 120-750, Korea;
rnDepartment of Physics, The Catholic University of Korea (CUK), Bucheon 420-743, Korea;
rnDepartment of Physics, The Catholic University of Korea (CUK), Bucheon 420-743, Korea;
rnDepartment of Physics, The Catholic University of Korea (CUK), Bucheon 420-743, Korea;
机译:组成梯度的Nd取代Bi_4Ti_3O_(12)铁电薄膜的极化偏移
机译:使用(111)取向SrRuO_3 / Pt电极在Si(100)上生长(104)取向铁电Nd取代Bi_4Ti_3O_(12)膜的性能和特性
机译:Bi_4Ti_3O_(12)与Bi_(3.25)La_(0.75)Ti_3O_(12)薄膜电容器之间不同疲劳行为的PT-铁电界面场景的证据
机译:无铅铁电薄膜的特性包括(Na_(0.5)Bi_(0.5))TiO_3和Bi_4Ti_3O_(12)
机译:利用压电响应力显微镜对铁电薄膜的开关行为进行纳米研究。
机译:纳米级制造铁电聚合物聚(偏二氟乙烯与三氟乙烯)P(VDF-TRFE)75:25通过原子力显微镜纳米线薄膜
机译:铁电薄膜中光致畴钉扎的纳米尺度观察和压印行为研究
机译:用扫描力显微镜研究铁电薄膜偏振保持损耗的纳米尺度