New Analytical Model for Short-Channel Fully Depleted Dual-Material-Gate Silicon-on-lnsulator Metal-Oxide-Semiconductor Field-Effect Transistors

摘要

Using the exact solution of the two-dimensional Poisson equation, a new analytical model comprising two-dimensional potential and threshold voltage for short-channel fully depleted dual-material-gate silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistors (MOSFETs) is developed. The model shows that the minimum acceptable channel length can be sustained while repressing the short-channel effects if a thin gate oxide and a thin silicon body are employed in the device. Moreover, by increasing the ratio of the screen gate length to control gate length, the threshold voltage roll-off can be more effectively reduced. The model is verified by the close agreement of its results with those of a numerical simulation using the device simulator MEDICI. The model not only offers an insight into the device physics but is also an efficient model for circuit simulation.