...
首页> 外文期刊>Japanese journal of applied physics >Quantum Chemistry Study of Surface Structure Effects on Secondary Electron Emission in MgO Protecting Layers for Plasma Displays
【24h】

Quantum Chemistry Study of Surface Structure Effects on Secondary Electron Emission in MgO Protecting Layers for Plasma Displays

机译:表面结构对等离子显示器MgO保护层中二次电子发射影响的量子化学研究

获取原文
获取原文并翻译 | 示例
   

获取外文期刊封面封底 >>

       

摘要

MgO protecting layers, which have high ion induced secondary electron emission coefficient (γ), are required in order to decrease the firing voltage of plasma displays. Theoretical estimation of ideal y value is needed for a design of better protecting layers. In this study, we report our developed γ calculation method based on a tight-binding quantum calculation and application to an estimation of y values of MgO protecting layers. From our calculation results, it was revealed that electron trap sites arising from surface roughness would work as an effective emission sites and increase y value. Especially for Xe~+ species as induced ion, the y value changed drastically by the presence of the trapped electron. It is also suggested that a presence of chemisorbed water on the MgO surface decreases the y values because of the contribution of the electrons at the low energy levels originated from surface OH groups.
机译:为了降低等离子体显示器的点火电压,需要具有高离子诱导的二次电子发射系数(γ)的MgO保护层。为了设计出更好的保护层,需要对理想y值进行理论估算。在这项研究中,我们报告了基于紧密结合量子计算的已开发的γ计算方法,并将其应用于MgO保护层y值的估算。从我们的计算结果可以看出,由表面粗糙度引起的电子陷阱位点将作为有效的发射位点并增加y值。特别是对于Xe〜+物种作为感应离子,y值由于存在被捕获的电子而急剧变化。还建议在MgO表面存在化学吸附的水会降低y值,这是由于电子在低能级上的贡献来自表面OH基。

著录项

  • 来源
    《Japanese journal of applied physics》 |2010年第4issue2期|P.04DJ14.1-04DJ14.4|共4页
  • 作者单位

    Department of Applied Chemistry, Graduate School of Engineering, Tohoku University, 6-6-11-1302 Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan;

    rnDepartment of Applied Chemistry, Graduate School of Engineering, Tohoku University, 6-6-11-1302 Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan;

    rnDepartment of Semiconductor Electronics and Integration Science, Graduate School of Advanced Sciences of Matter, Hiroshima University, 1-3-1 Kagamiyama, Higashihiroshima, Hiroshima 739-8530, Japan;

    rnDepartment of Semiconductor Electronics and Integration Science, Graduate School of Advanced Sciences of Matter, Hiroshima University, 1-3-1 Kagamiyama, Higashihiroshima, Hiroshima 739-8530, Japan;

    rnDepartment of Semiconductor Electronics and Integration Science, Graduate School of Advanced Sciences of Matter, Hiroshima University, 1-3-1 Kagamiyama, Higashihiroshima, Hiroshima 739-8530, Japan;

    rnDepartment of Chemical Engineering, Graduate School of Engineering, Tohoku University, 6-6-11-1302 Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan;

    rnDepartment of Chemical Engineering, Graduate School of Engineering, Tohoku University, 6-6-11-1302 Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan;

    rnNew Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan;

    rnDepartment of Applied Chemistry, Graduate School of Engineering, Tohoku University, 6-6-11-1302 Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan;

    rnDepartment of Applied Chemistry, Graduate School of Engineering, Tohoku University, 6-6-11-1302 Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan;

    rnDepartment of Applied Chemistry, Graduate School of Engineering, Tohoku University, 6-6-11-1302 Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan;

    rnDepartment of Chemical Engineering, Graduate School of Engineering, Tohoku University, 6-6-11-1302 Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan;

    rnFracture and Reliability Research Institute, Graduate School of Engineering, Tohoku University, 6-6-11-701 Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan;

    rnDepartment of Semiconductor Electronics and Integration Science, Graduate School of Advanced Sciences of Matter, Hiroshima University, 1-3-1 Kagamiyama, Higashihiroshima, Hiroshima 739-8530, Japan;

    rnDepartment of Applied Chemistry, Graduate School of Engineering, Tohoku University, 6-6-11-1302 Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan Department of Chemical Engineering, Graduate School of Engineering, Tohoku University, 6-6-11-1302 Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号