A New Rounded Edge Fin Field Effect Transistor for Improving Self-Heating Effects

摘要

In this paper, a new rounded edge fin field-effect transistor (RE-FinFET) is proposed, where the edges of fins near source and drain regions are rounded in order to reduce self-heating effects. The key idea in this work is to control self-heating by reducing the thermal resistance. Moreover, our simulation results demonstrate that current of the device increases. Also, the series resistance reduces due to the rounded edges of fins near source and drain. Furthermore, using three-dimensional (3D) and two-carrier device simulator, we have examined various design issues of the RE-FinFET and provided the reasons for the improved performance in terms of self-heating and short channel effects. Our results suggest that RE-FinFET is an alternate structure for FinFETs, and expands the application of FinFETs to high temperature.