Gallium Nitride Film Growth Using a Plasma Based Migration Enhanced Afterglow Chemical Vapor Deposition System

摘要

Gallium nitride layers were grown by a new migration enhanced epitaxy technique called MEAglow. Initial experiments were performed to characterize the plasma source used and to examine the surfaces of thin samples grown by the technique. Atomic force microscopy (AFM) results show root mean square (RMS) surface roughness values of less than 1 nm for samples grown at 650 ℃, this is commensurate with Ga-face material grown directly on nitrided sapphire substrates.