...
机译:通过金属有机气相外延生长半极性(2021)和(2021)GaN衬底的选择性区域
Department of Electrical and Electronic Engineering, Mie University, Tsu 514-8507, Japan;
Department of Electrical and Electronic Engineering, Mie University, Tsu 514-8507, Japan;
Department of Electrical and Electronic Engineering, Mie University, Tsu 514-8507, Japan;
Department of Electrical and Electronic Engineering, Mie University, Tsu 514-8507, Japan;
Mitsubishi Chemical Corporation, Ushiku, Ibaraki 300-1295, Japan;
Mitsubishi Chemical Group Science and Technology Research Center, Inc., Yokohama 227-8502, Japan;
机译:金属有机气相外延法在GaAs(001)衬底上生长GaN的选择性区域
机译:通过选择性金属有机气相外延在(111)Si衬底上生长无裂纹的GaN
机译:通过选择性金属有机气相外延在(111)Si衬底上生长无裂纹的GaN
机译:金属有机气相外延和氢化物气相外延的选择性地区生长和外延横向过度生长
机译:微金属应用中通过金属有机气相外延生长在6H-SiC(0001)衬底上的GaN和AlGaN的生长,掺杂和表征。
机译:有机金属气相外延过程中GaN(0001)和(000-1)的CH4吸附概率及其与膜中碳污染的关系
机译:使用AlAs中间层通过金属有机气相外延在GaAs {11n}衬底上生长的六方GaN
机译:蓝宝石和氢化物气相外延衬底上Er掺杂GaN的生长和形貌