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首页> 外文期刊>Japanese journal of applied physics >Electronic States of Trivalent Praseodymium Ion Doped in 20AI(PO_3)_3-80LiF Glass
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Electronic States of Trivalent Praseodymium Ion Doped in 20AI(PO_3)_3-80LiF Glass

机译：20AI（PO_3）_3-80LiF玻璃中掺杂的三价Pra离子的电子态

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摘要

We investigate the photoluminescence (PL) and photoluminescence excitation (PLE) spectra of 20AI(PO_3)_3-80LiF+Pr glass (APLF+Pr) and Pr~(3+)-doped LiCaAIF_6 crystal (Pr:LiCAF) in order to determine the electronic states of Pr~(3+) in APLF glass host and to improve APLF+Pr scintillation properties. Ultraviolet (UV) emission bands at around 250 and 340 nm were observed from both materials and these can be ascribed to 4f5d → 4f~2 transitions in Pr~(3+). Emission at around 400 nm was also obtained and is principally attributed to ~1S_0 →4f~2 transition. Difference in the emission profiles of these two materials was found to be due to the extent of the 5d band and its position relative to the ~1S_0 state. Increasing the concentration of Pr~(3+) up to 2 mol % was found to improve UV emission ratio due to the faster cross-relaxation of 4f states. This could improve the quantum efficiency of APLF+Pr as a neutron scintillator for scattered-neutron diagnostics in laser fusion research.
机译：我们研究了20AI（PO_3）_3-80LiF + Pr玻璃（APLF + Pr）和掺Pr〜（3+）的LiCaAIF_6晶体（Pr：LiCAF）的光致发光（PL）和光致发光激发（PLE）光谱改善了APLF玻璃基质中Pr〜（3+）的电子态，提高了APLF + Pr的闪烁性能。从这两种材料中均观察到了约250和340 nm的紫外（UV）发射带，这可归因于Pr〜（3+）中的4f5d→4f〜2跃迁。还获得了约400 nm的发射，其主要归因于〜1S_0→4f〜2跃迁。发现这两种材料的发射曲线的差异是由于5d谱带的范围及其相对于〜1S_0状态的位置。发现Pr〜（3+）的浓度增加到2 mol％可以提高UV发射率，这是因为4f态的交叉弛豫更快。这可以提高APLF + Pr作为中子闪烁体在激光聚变研究中用于散射中子诊断的量子效率。

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  • 来源
    《Japanese journal of applied physics》 |2013年第6issue1期|062402.1-062402.4|共4页
  • 作者

    Mizuki Tsuboi; Kohei Takeda; Tomoharu Nakazato; Masahiro Kono; Kohei Yamanoi; Marilou Cadatal-Raduban; Kohei Sakai; Ryosuke Nishi; Yuki Minami; Mui Viet Luong; Yasunobu Arikawa; Toshihiko Shimizu; Nobuhiko Sarukurua; Takayoshi Norimatsu; Mitsuo Nakai; Hiroshi Azechi; Takahiro Murata; Shigeru Fujino; Hideki Yoshida; Akira Yoshikawa; Nakahiro Sato; Hirofumi Kan; Kei Kamata;

  • 作者单位

    Institute of Laser Engineering, Osaka University, Suita, Osaka 565-0871, Japan;

    Institute of Laser Engineering, Osaka University, Suita, Osaka 565-0871, Japan;

    Institute of Laser Engineering, Osaka University, Suita, Osaka 565-0871, Japan;

    Institute of Laser Engineering, Osaka University, Suita, Osaka 565-0871, Japan;

    Institute of Laser Engineering, Osaka University, Suita, Osaka 565-0871, Japan;

    Centre for Theoretical Chemistry and Physics, Institute of Natural and Mathematical Sciences, Massey University, Albany, Auckland 0632, New Zealand;

    Institute of Laser Engineering, Osaka University, Suita, Osaka 565-0871, Japan;

    Institute of Laser Engineering, Osaka University, Suita, Osaka 565-0871, Japan;

    Institute of Laser Engineering, Osaka University, Suita, Osaka 565-0871, Japan;

    Institute of Laser Engineering, Osaka University, Suita, Osaka 565-0871, Japan;

    Institute of Laser Engineering, Osaka University, Suita, Osaka 565-0871, Japan;

    Institute of Laser Engineering, Osaka University, Suita, Osaka 565-0871, Japan;

    Institute of Laser Engineering, Osaka University, Suita, Osaka 565-0871, Japan;

    Institute of Laser Engineering, Osaka University, Suita, Osaka 565-0871, Japan;

    Institute of Laser Engineering, Osaka University, Suita, Osaka 565-0871, Japan;

    Institute of Laser Engineering, Osaka University, Suita, Osaka 565-0871, Japan;

    Kumamoto University, Kumamoto 860-8555, Japan;

    Kyushu University, Fukuoka 812-8581, Japan;

    Ceramic Research Center of Nagasaki, Hasami, Nagasaki 859-3726, Japan;

    Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan;

    Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan;

    Hamamatsu Photonics K.K., Hamamatsu 430-8587, Japan;

    Furukawa Co., Ltd., Chiyoda, Tokyo 100-8370, Japan;

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