Wide Gap Microcrystalline Silicon Oxide Emitter for a-SiO_x:H/c-Si Heterojunction Solar Cells

摘要

This paper reports on the development of phosphorous doped microcrystalline silicon oxide (μc-SiO_x:H) films as an emitter window layer in flat p-type silicon heterojunction (SHJ) solar cells featuring intrinsic a-SiO_x:H buffer layers. We investigated the material properties of n-type μc-SiO_x:H films grown at various input gas ratios and correlated the results of SHJ solar cells utilizing varying oxygen content and thickness of the emitter layer to the corresponding film properties. A maximum efficiency of 19.0% was achieved. The excellent short circuit current of 35.8 mA/cm~2 for flat cells was attributed to the low optical losses in the emitter window.