机译:InGaN / GaN多量子阱结构对太阳能电池光伏特性的影响
NTT Photonics Laboratories, Nippon Telegraph and Telephone Corporation, Atsugi, Kanagawa 243-0198, Japan, NTT Device Technology Laboratories, Nippon Telegraph and Telephone Corporation, Atsugi, Kanagawa 243-0198, Japan;
NTT Photonics Laboratories, Nippon Telegraph and Telephone Corporation, Atsugi, Kanagawa 243-0198, Japan, NTT Device Technology Laboratories, Nippon Telegraph and Telephone Corporation, Atsugi, Kanagawa 243-0198, Japan;
NTT Photonics Laboratories, Nippon Telegraph and Telephone Corporation, Atsugi, Kanagawa 243-0198, Japan, NTT Device Technology Laboratories, Nippon Telegraph and Telephone Corporation, Atsugi, Kanagawa 243-0198, Japan;
Graduate School of Engineering, Osaka City University, Osaka 588-8585, Japan;
Graduate School of Engineering, Osaka City University, Osaka 588-8585, Japan;
机译:InGaN / GaN多量子阱太阳能电池光伏特性的壁垒厚度依赖性
机译:铟涨落对InGaN / GaN多量子阱太阳能电池光伏特性的影响
机译:铟涨落对InGaN / GaN多量子阱太阳能电池光伏特性的影响
机译:使用CdS量子点和分布式布拉格反射器提高InGaN / GaN多量子阱太阳能电池的效率
机译:InGaN / GaN多量子阱结构:亚微米结构,光学,电和化学性质。
机译:使用在空心n-GaN纳米线上形成的非极性同轴InGaN / GaN多量子阱结构产生氢
机译:通过插入薄的GaN盖层来增强InGaN / GaN多量子阱太阳能电池的光伏响应