Integration of Ⅲ-Ⅴ materials and Si-CMOS through double layer transfer process

摘要

A method to integrate Ⅲ-Ⅴ compound semiconductor and SOI-CMOS on a common Si substrate is demonstrated. The SOI-CMOS layer is temporarily bonded on a Si handle wafer. Another Ⅲ-Ⅴ/Si substrate is then bonded to the SOI-CMOS containing handle wafer. Finally, the handle wafer is released to realize the SOI-CMOS on Ⅲ-Ⅴ/Si hybrid structure on a common substrate. Through this method, high temperature Ⅲ-Ⅴ materials growth can be completed without the presence of the temperature sensitive CMOS layer, hence damage to the CMOS layer is avoided.