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机译:通过微转移印刷实现GaN HEMT在Si-CMOS上的灵活可扩展异构集成
X-FAB Semiconductor Foundries AG Haarbergstrasse 67, 99097 Erfurt, Germany;
X-FAB Semiconductor Foundries AG Haarbergstrasse 67, 99097 Erfurt, Germany;
X-FAB Semiconductor Foundries AG Haarbergstrasse 67, 99097 Erfurt, Germany;
X-Celeprint Ltd, Lee Maltings Dyke Parade, Cork, Ireland;
X-Celeprint Ltd, Lee Maltings Dyke Parade, Cork, Ireland;
X- Celeprint Inc. 3021 Cornwallis Rd., Research Triangle Park, North Carolina, USA;
X- Celeprint Inc. 3021 Cornwallis Rd., Research Triangle Park, North Carolina, USA;
Fraunhofer Institute for Applied Solid State Physics Tullastrasse 72, 79108 Freiburg, Germany;
Fraunhofer Institute for Applied Solid State Physics Tullastrasse 72, 79108 Freiburg, Germany;
Fraunhofer Institute for Applied Solid State Physics Tullastrasse 72, 79108 Freiburg, Germany;
gallium-nitride HEMT; heterogeneous integration; micro-Transfer-Printing; silicon CMOS;
机译:GaN HEMT和Si(100)MOSFET的晶圆级异质集成
机译:异构地集成了RF电路,使用高度缩放的搁板GaN HEMT小芯片
机译:用于大规模集成Si CMOS的大规模Si晶片上高质量InGaAs HEMT层的MOCVD生长
机译:GaN HEMT的微转移印刷用于异构集成和灵活的RF电路设计
机译:GaN HEMT与硅MOS技术的单片集成
机译:GaN离子切片和在CMOS兼容Si(100)衬底上异质集成高质量GaN膜的热力学研究
机译:用于物联网应用的柔性硅上异构多传感器的CMOS兼容大规模单片集成