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机译:表面活化键合方法在锗晶片上进行室温直接键合
Department of Precision Engineering, School of Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan;
Department of Precision Engineering, School of Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan;
Department of Precision Engineering, School of Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan;
Department of Precision Engineering, School of Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan;
College of Arts and Sciences, The University of Tokyo, Meguro, Tokyo 153-8902, Japan;
College of Arts and Sciences, The University of Tokyo, Meguro, Tokyo 153-8902, Japan;
National Institute of Information and Communications Technology, Koganei, Tokyo 184-8795, Japan;
机译:比较研究:SiC-SiC通过标准表面活化粘合的直接晶片键合,并用含Si的Ar离子束改性表面活化键合
机译:组合表面活化键合技术用于低温亲水性直接晶圆键合
机译:室温粘合硅在绝缘体晶片上,具有通过退火的沉积硅氧化层和表面活化粘合而形成的致密掩埋氧化物层
机译:结合表面活化键合(SAB)技术的低温晶圆键合新方法
机译:通过直接晶圆键合的砷化铟镓和氮化镓FET。
机译:金膜厚度和表面粗糙度对室温晶圆键合和金-金表面活化键合的晶圆级真空密封的影响
机译:使用表面活性粘合法在环境空气中具有光滑Au薄膜的晶片室温粘合
机译:直接氟化过程中金属碳键的保存。一种实用的综合方法。四(三氟甲基)锗的合成。