Temperature dependence on plasma-induced damage and chemical reactions in GaN etching processes using chlorine plasma

摘要

Plasma-induced damage (PID) on GaN was optimally reduced by high-temperature chlorine plasma etching Energetic ion bombardments primarily induced PID involving stotchiometry, surface roughness, and photoluminescence (PL) degradation Chemical reactions under ultraviolet (UV) irradiation and chlorine radical exposure at temperatures higher than 400 degrees C can be controlled by taking into account the synergism of simultaneous photon and radical irradiations to effectively reduce PID. (C) 2018 The Japan Society of Applied Physics