Bias-Dependent Small-Signal Modeling Based on Neuro-Space Mapping for MOSFET

摘要

In this article, bias-dependent small-signal modeling approach based on neuro-space mapping is proposed for MOSFET. Good agreement is obtained between the simulated and measured results for a 130 nm MOSFET in the frequency range of 100 MHz-40 GHz confirming the validity and effectiveness of our approach. In addition, higher accuracy is achieved by our approach in contrast to conventional empirical model.