机译:基于二维表面电位的阈值电压模型,用于短沟道非对称重掺杂DG MOSFET
School of Technology Electronics and Tele-Communication Engineering KIIT University Bhubaneswar Odisha India;
Department of Electronics and Communication Engineering Jadavpur University Kolkata India;
Department of Electronics and Communication Engineering SKP Engineering College Tiruvannamalai Tamil Nadu India;
Department of Electronics and Communication Engineering Jadavpur University Kolkata India;
asymmetric double gate; threshold voltage; 2-D Poisson's equation; channel doping;
机译:具有垂直高斯掺杂分布的短沟道双栅极(DG)MOSFET的阈值电压模型
机译:非对称重/轻掺杂DG MOSFET的短沟道漏极电流模型
机译:亚阈值区域内短通道无结DG MOSFET内的阈值电压和2D电位建模
机译:具有非均匀横向沟道掺杂的亚微米MOSFET中基于表面电势的反向短沟道效应模型
机译:DG MOSFET接近阈值IV特性的非GCA建模
机译:具有位置载流子散射相关性的准弹道漏电流电荷和电容模型对纳米级对称DG MOSFET有效
机译:均匀掺杂的短沟道对称双栅(DG)MOSFET的掺杂相关阈值电压模型
机译:50 nm外延通道mOsFET中的随机掺杂阈值电压波动:3D'原子'模拟研究