Stackable SiC-Embedded Ceramic Packages for High-Voltage and High-Temperature Power Electronic Applications

摘要

This study encompasses the development of a highvoltageand high-temperature–capable package for power electronicapplications based on the embedding of silicon carbide (SiC)semiconductor devices in the ceramic circuit carrier such as thedirect bonded copper (DBC) substrate. By sealing semiconductordevices into DBC substrates, high temperature, high voltage, andhigh current capability as well as high corrosion resistance can beachieved compared with the state-of-the-art printed circuit board(PCB) embedding technology. The power devices are attached withhigh-temperature stable solder and sinter material and are surroundedby thermal conductive ceramic and high-temperature–capable potting materials that enable the complete package tooperate at 250°C or above. Furthermore, the single embeddedpackages can be stacked together to multilevel DBC topologies withincreased voltage blocking characteristics. Thus, current limits of thePCB and low-temperature cofired ceramic–based multilayer solutionsare exceeded and will be confirmed in the course of this study.This package is designed to carry out the maximal performance ofSiC and future wide bandgap devices. It is a promising solution notonly for applications in harsh ambient environments such asaerospace and turbine, geothermal well logging, and downhole oiland gas wells but also for hybrid electric/electric vehicle and energyconversion.