Powerful ultrafast high-temperature high-voltage diode in cermet, metal packages with pin terminals circular or rectangular cross section for use in various electronic devices that can be used in production of electronic, electrical, and other industries. The main object of the proposed utility model is a dramatic improvement in performance, the dynamic characteristics of high-speed high-power diodes, raising their temperature resistance, reliability. Ultrafast high-voltage high-gallium arsenide pin diode comprises a metallic chip carrier 1, an insulating heat dissipating ceramic chip carrier 2, a metal housing-body 3, glass or ceramic insulators 4, terminals 5 of the housing, the crystal aresind gallium pin diode 6 electrically interconnect crystal body 7 metal cap 8. The metal housing parts 1, 3, 5, 8 are produced by stamping, housing terminations 5 are performed by punching or wire cutters. Housing is going by soldering in a hydrogen reducing atmosphere. Crystal gallium arsenide pin diode made on p + -type high-alloy substrates. The method of liquid-phase epitaxy is grown consistently high-resistance n - -layer and low resistance (ohmic) n + -layer. Chip soldered on the chip housing a high-temperature lead-free solder. The interconnections are performed by ultrasonic welding or other methods. Sealing body carried seaming roller-welding.
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