机译:减少半导体异质结中注入结整流器的辐射缺陷数量
Nizhny Novgorod State University of Architecture and Civil Engineering,65 ll'insky street, Nizhny Novgorod, 603950, Russia,Nizhny Novgorod Institute of Commerce, 24 Lenin avenue, Nizhny Novgorod, 603950, Russia;
Nizhny Novgorod State University of Architecture and Civil Engineering,65 ll'insky street, Nizhny Novgorod, 603950, Russia;
conductivity phenomena in semiconductors and insulators; Ⅲ-Ⅴ semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions; other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions; diffusion in solids; impurity doping, diffusion and ion implantation technology;
机译:通过使用叠加器减少植入结整流器中的辐射缺陷数量
机译:通过优化激光退火降低半导体异质结中注入结整流器的深度
机译:优化脉冲激光退火以提高半导体异质结构中注入结整流器的清晰度
机译:近曲面退火的优化近表面退火,降低半导体异质结构中P-N结的深度
机译:高级III族氮化物半导体中的深度缺陷:质子辐照的存在,性质和影响
机译:质子辐照对常断型AlGaN / GaN栅嵌入式金属-绝缘体-半导体异质结构场效应晶体管随时间变化的介电击穿特性的影响
机译:优化脉冲激光退火以提高半导体异质结构中注入结整流器的清晰度