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Experimental investigation on the growth rate of Cu nano-thin films by DC and RF magnetron sputtering methods

机译:直流和射频磁控溅射法研究Cu纳米薄膜的生长速率的实验研究

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摘要

The growth rate of the Cu nano-thin film was investigated based on the magnetron sputtering method under different process parameters and different sputtering method. Firstly, some samples of Cu nano-thin films were sputtered on the glass substrate by changing different sputtering power at the direct current (DC) magnetron sputtering method. Secondly, some Cu nano-thin film samples were prepared by using the DC magnetron sputtering method and radio frequency (RF) magnetron sputtering methods. The thickness of the Cu nano-thin film was test by the film thickness gauge, and then the growth rate of the Cu nano-thin film was obtained. These results show that the sputtering power is very important for the growth rate. The growth rate of the Cu nano-thin film increases with the increase of the sputtering power at the DC magnetron sputtering method; the growth rate of the Cu nano-thin film prepared under the DC magnetron sputtering method is about ten times of that prepared under the RF magnetron sputtering method.
机译:基于磁控溅射法,研究了不同工艺参数和溅射方法下Cu纳米薄膜的生长速率。首先,通过改变直流(DC)磁控溅射方法的不同溅射功率,在玻璃基板上溅射一些Cu纳米薄膜样品。其次,采用直流磁控溅射法和射频(RF)磁控溅射法制备了一些Cu纳米薄膜样品。通过膜厚计测试Cu纳米薄膜的厚度,然后获得Cu纳米薄膜的生长速率。这些结果表明溅射功率对于生长速率非常重要。直流磁控溅射法中,随着溅射功率的增加,Cu纳米薄膜的生长速率增加。 DC磁控溅射法制备的Cu纳米薄膜的生长速率约为RF磁控溅射法制备的Cu纳米薄膜的生长速率的十倍。

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