Bandwidth enhancement of an inverse class-F power amplifier based on LDMOS devices

摘要

In this article, we report the design of an inverse class-F power amplifier for L-band transmit/receive module based on LDMOS (laterally diffused metal oxide semiconductor) transistors. The objective was to obtain high power efficiency over a wide band. Measurements showed a minimum of 61% power added efficiency (PAE) and 10 W output power with a gain of 14 dB over a bandwidth of 200 MHz. Average measured performances are, respectively, 11.4W (±1.4W) output power and 62.8% (±1.8%) PAE; 64.5% maximum PAE associated with 12.7 W output power has been reached. These results are, to our knowledge, the highest reported combination of power efficiency and bandwidth.